Title :
Photoconductive characteristics of silicon in millimeter-wave bands
Author :
Su, Hansheng ; Yang, Bin ; Liu, Xiaoming ; Chen, Xiaodong ; Yu, Junsheng
Author_Institution :
Sch. of Electron. Eng. & Comput. Sci., Univ. of London, London, UK
Abstract :
In this paper, the photoconductivity of silicon is characterized in measurement in two mm-wave bands: 110GHz - 170GHz and 220GHz - 325GHz. It is shown that in the mm-wave bands the silicon has a low loss under dark condition but becomes almost opaque under light illumination.
Keywords :
dark conductivity; elemental semiconductors; millimetre wave spectra; photoconductivity; silicon; Si; dark condition; frequency 110 GHz to 170 GHz; frequency 220 GHz to 325 GHz; millimeter-wave bands; mm-wave bands; photoconductive characteristics; Lighting; Microwave antennas; Optical switches; Photoconductivity; Semiconductor device measurement; Silicon;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380179
