DocumentCode :
2508564
Title :
100 nm square single crystal silicon shear strain gauge
Author :
Toriyama, T. ; Sugiyama, S.
Author_Institution :
New Energy & Ind. Technol. Dev. Organ., Tokyo, Japan
fYear :
2002
fDate :
2002
Firstpage :
223
Lastpage :
226
Abstract :
Fabrication and characteristics of a ∼100 nm square p-type single crystal silicon four-terminal shear strain gauge (Si FSSG) were described. The shear piezoresistance was measured in order to verify the ability of nano metric scale Si FSSG. The shear piezoresistance coefficient π44 was found to be 77.4×10-11 Pa-1 at surface impurity concentration Ns=9×1019 cm-3. This value was 54.8% larger than the value obtained from p+ diffused piezoresistor used for the conventional mechanical sensors. A good prospect for the application of Si FSSG to the nano metric mechanical sensors was obtained.
Keywords :
elemental semiconductors; microsensors; piezoresistance; silicon; strain gauges; 100 nm; Si; four-terminal shear strain gauge; nanometric mechanical sensor; p-type single crystal silicon; shear piezoresistance coefficient; surface impurity concentration; Atomic force microscopy; Capacitive sensors; Current density; Force sensors; Mechanical sensors; Piezoresistance; Silicon; Strain measurement; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micromechatronics and Human Science, 2002. MHS 2002. Proceedings of 2002 International Symposium on
Print_ISBN :
0-7803-7611-0
Type :
conf
DOI :
10.1109/MHS.2002.1058039
Filename :
1058039
Link To Document :
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