100 nm square single crystal silicon shear strain gauge

Fabrication and characteristics of a ∼100 nm square p-type single crystal silicon four-terminal shear strain gauge (Si FSSG) were described. The shear piezoresistance was measured in order to verify the ability of nano metric scale Si FSSG. The shear piezoresistance coefficient π₄₄ was found to be 77.4×10^-11 Pa^-1 at surface impurity concentration Ns=9×10¹⁹ cm^-3. This value was 54.8% larger than the value obtained from p⁺ diffused piezoresistor used for the conventional mechanical sensors. A good prospect for the application of Si FSSG to the nano metric mechanical sensors was obtained.