InP based heterostructure for medium power applications

Author

van der Zanden, K. ; Vandenberghe, Stefaan ; Schreurs, Dominique ; De Raedt, W. ; Nauwelaers, B.

Author_Institution

IMEC, Leuven

fYear

1997

fDate

24-25 Nov 1997

Firstpage

125

Lastpage

128

Abstract

In this paper a double doped InP based HEMT layer structure designed for power applications is presented. An electron density n_c=5.1·10¹² cm^-2 and a mobility μ=8.4·10³ cm²/Vs at room temperature result in a maximum channel current density of 1000 mA/mm. The output conductance G_ds is limited to 27 mS/mm with a maximum transconductance G_m of 713 mS/mm for 0.2 μm gate length. The cut-off frequency f_T is 99 GHz and the maximum oscillation frequency f_MAX is 218 GHz. Power measurements show a very low second and third harmonic component of -33 and -26 dBc which can be attributed to the G_m staying constant within 10% for a gate voltage swing of 0.9 Volt

Keywords

III-V semiconductors; electron density; electron mobility; indium compounds; power HEMT; semiconductor heterojunctions; InP; current density; cut-off frequency; double doped InP HEMT; electron density; electron mobility; heterostructure; layer structure; maximum oscillation frequency; medium power application; output conductance; staying constant; transconductance; Current density; Cutoff frequency; Electron mobility; HEMTs; Indium phosphide; Power measurement; Power system harmonics; Temperature; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668585

Filename

668585