Title :
Choice of semiconductor material for high-temperature operation of terahertz quantum cascade laser
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Tokyo, Japan
Abstract :
One possible way to realize high-temperature operation of terahertz quantum cascade lasers (THz-QCLs) is to introduce a new semiconductor material system instead of GaAs/AlGaAs. It is important to take into account not only longitudinal optical (LO) phonon energy of the material but broadening of subband levels caused by LO phonon-electron interaction. We propose a AlP/GaP-based THz-QCL structure and confirm that it has a gain even at 300 K by using the non-equilibrium Green´s function method.
Keywords :
Green´s function methods; III-V semiconductors; aluminium compounds; electron-phonon interactions; gallium arsenide; millimetre wave lasers; quantum cascade lasers; AlP-GaP; GaAs-AlGaAs; Green´s function; LO phonon-electron interaction; longitudinal optical phonon energy; semiconductor material system; temperature 300 K; terahertz quantum cascade laser; Couplings; Gallium arsenide; Green´s function methods; Phonons; Quantum cascade lasers; Scattering;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380183
