DocumentCode
2508653
Title
Design challenges in sub-100 nm high performance microprocessors
Author
Narendra, Siva G. ; Tschanz, James ; Erraguntla, Vasantha ; Borkar, Nitin
Author_Institution
Circuit Res.-Intel Labs., Intel Corp., Hillsboro, OR, USA
fYear
2004
fDate
2004
Firstpage
15
Lastpage
17
Abstract
This article deals with design challenges for high performance microprocessors. Device challenges including gate leakage, junction tunneling, junction depth scaling, parasitic series resistance, and short channel effects. Microprocessor frequencies are increasing every generation from additional architectural and circuit complexity, which demands higher level of integration and die size increase. To address these scaling challenges, devices, circuits and design methodologies need to evolve. Scaling gate oxide thickness is important for controlling short channel effects.
Keywords
circuit complexity; microprocessor chips; scaling circuits; tunnelling; 100 nm; circuit complexity; gate leakage; junction depth scaling; junction tunneling; microprocessor frequencies; microprocessors device; parasitic series resistance; scaling gate oxide thickness; short channel effects; CMOS technology; Circuit synthesis; Design methodology; Energy consumption; Integrated circuit interconnections; Microprocessors; Power dissipation; Threshold voltage; Tunneling; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, 2004. Proceedings. 17th International Conference on
Print_ISBN
0-7695-2072-3
Type
conf
DOI
10.1109/ICVD.2004.1260894
Filename
1260894
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