• DocumentCode
    2508653
  • Title

    Design challenges in sub-100 nm high performance microprocessors

  • Author

    Narendra, Siva G. ; Tschanz, James ; Erraguntla, Vasantha ; Borkar, Nitin

  • Author_Institution
    Circuit Res.-Intel Labs., Intel Corp., Hillsboro, OR, USA
  • fYear
    2004
  • fDate
    2004
  • Firstpage
    15
  • Lastpage
    17
  • Abstract
    This article deals with design challenges for high performance microprocessors. Device challenges including gate leakage, junction tunneling, junction depth scaling, parasitic series resistance, and short channel effects. Microprocessor frequencies are increasing every generation from additional architectural and circuit complexity, which demands higher level of integration and die size increase. To address these scaling challenges, devices, circuits and design methodologies need to evolve. Scaling gate oxide thickness is important for controlling short channel effects.
  • Keywords
    circuit complexity; microprocessor chips; scaling circuits; tunnelling; 100 nm; circuit complexity; gate leakage; junction depth scaling; junction tunneling; microprocessor frequencies; microprocessors device; parasitic series resistance; scaling gate oxide thickness; short channel effects; CMOS technology; Circuit synthesis; Design methodology; Energy consumption; Integrated circuit interconnections; Microprocessors; Power dissipation; Threshold voltage; Tunneling; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, 2004. Proceedings. 17th International Conference on
  • Print_ISBN
    0-7695-2072-3
  • Type

    conf

  • DOI
    10.1109/ICVD.2004.1260894
  • Filename
    1260894