Title :
Mixed signal circuits based on a 0.2 μm gate length AlGaAs/GaAs/AlGaAs quantum well HEMT technology
Author :
Thiede, A. ; Schlechtweg, M. ; Hurm, V. ; Wang, Z.-G. ; Lang, M. ; Leber, P. ; Lao, Z. ; Nowotny, U. ; Rieger-Motzer, M. ; Sedler, M. ; Köhler, K. ; Bronner, W. ; Fink, T. ; Hülsmann, A. ; Kaufel, G. ; Raynor, B. ; Schneider, J. ; Jakobus, T. ; Schroth, J
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Abstract :
During the past 5 years numerous mixed signal circuits have been designed, processed, and characterized based on our 0.2 μm gate length AlGaAs/GaAs/AlGaAs E/D quantum well HEMT technology. Utilizing the inherent advantages of this material system, optical, analogue, microwave, and digital functions have been integrated monolithically. Examples are a chip set for 40 Gbit/s optoelectronic data transmission system, PLL circuits for 15 GHz and 34 GHz, and a 35 GHz phase shifter for phased array antenna applications
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; mixed analogue-digital integrated circuits; semiconductor quantum wells; 0.2 micron; 15 GHz; 34 GHz; 35 GHz; 40 Gbit/s; AlGaAs-GaAs-AlGaAs; AlGaAs/GaAs/AlGaAs E/D quantum well HEMT; PLL; chip set; mixed signal circuit; monolithic integration; optoelectronic data transmission system; phase shifter; phased array antenna; Data communication; Gallium arsenide; HEMTs; Integrated circuit technology; Integrated optics; Optical materials; Phased arrays; Process design; Signal design; Signal processing;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668590
