• DocumentCode
    2508740
  • Title

    High altitude current-voltage measurement of GaAs/Ge solar cells

  • Author

    Hart, Russell E., Jr. ; Brinker, David J. ; Emery, Keith A.

  • Author_Institution
    NASA Lewis Res. Center, Cleveland, OH, USA
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    764
  • Abstract
    Measurements of high-voltage (Voc of 1.2 V) gallium arsenide on germanium tandem junction solar cells at air mass 0.22 showed that the insolation in the red portion of the solar spectrum is insufficient to obtain high fill factor. On the basis of measurements in the LeRC X-25L solar simulator, these cells were believed to be as efficient as 21.68% AM0. Solar simulator spectrum errors in the red end allowed the fill factor to be as high as 78.7%. When a similar cell´s current-voltage characteristic was measured at high altitude in the NASA Lear Jet Facility, a loss of 15 percentage points in fill factor was observed. This decrease was caused by insufficient current in the germanium bottom cell of the tandem stack.
  • Keywords
    III-V semiconductors; electric current measurement; elemental semiconductors; gallium arsenide; germanium; p-n heterojunctions; solar cells; voltage measurement; 1.2 V; 21.68 percent; GaAs-Ge; Ge; LeRC X-25L solar simulator; NASA Lear Jet Facility; current-voltage measurement; fill factor; high altitude; semiconductor; solar cells; solar spectrum; tandem junction solar cells; Aircraft; Calibration; Current measurement; Current-voltage characteristics; Energy measurement; Gallium arsenide; Germanium; Loss measurement; NASA; Photovoltaic cells; Solar energy; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105805
  • Filename
    105805