DocumentCode
2508740
Title
High altitude current-voltage measurement of GaAs/Ge solar cells
Author
Hart, Russell E., Jr. ; Brinker, David J. ; Emery, Keith A.
Author_Institution
NASA Lewis Res. Center, Cleveland, OH, USA
fYear
1988
fDate
1988
Firstpage
764
Abstract
Measurements of high-voltage (Voc of 1.2 V) gallium arsenide on germanium tandem junction solar cells at air mass 0.22 showed that the insolation in the red portion of the solar spectrum is insufficient to obtain high fill factor. On the basis of measurements in the LeRC X-25L solar simulator, these cells were believed to be as efficient as 21.68% AM0. Solar simulator spectrum errors in the red end allowed the fill factor to be as high as 78.7%. When a similar cell´s current-voltage characteristic was measured at high altitude in the NASA Lear Jet Facility, a loss of 15 percentage points in fill factor was observed. This decrease was caused by insufficient current in the germanium bottom cell of the tandem stack.
Keywords
III-V semiconductors; electric current measurement; elemental semiconductors; gallium arsenide; germanium; p-n heterojunctions; solar cells; voltage measurement; 1.2 V; 21.68 percent; GaAs-Ge; Ge; LeRC X-25L solar simulator; NASA Lear Jet Facility; current-voltage measurement; fill factor; high altitude; semiconductor; solar cells; solar spectrum; tandem junction solar cells; Aircraft; Calibration; Current measurement; Current-voltage characteristics; Energy measurement; Gallium arsenide; Germanium; Loss measurement; NASA; Photovoltaic cells; Solar energy; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105805
Filename
105805
Link To Document