Title :
A 21.8% GaInP2/GaAs tandem solar cell
Author :
Olsen, J.M. ; Kurtz, S.R. ; Kibbler, A.E.
Author_Institution :
Solar Energy Res. Inst., Golden, CO, USA
Abstract :
A two-terminal, monolithic cascade solar cell is reported with an efficiency of 21.8% (Jsc=11.8 mA/cm2, Voc=2.19 V, and fill factor=85% under AM1.5 global conditions, cell area=1 cm2). The device structure is two n-on-p cells, Ga0.5In0.5P (GaInP2) and GaAs, with a GaAs tunnel diode cell interconnect. The films were grown in a vertical flow MOCVD (metal-organic chemical vapor deposition) reactor at 700 degrees C, using trimethylgallium, trimethylindium, arsine, and phosphine, with diethylzinc and hydrogen selenide as dopants. The bandgaps of the GaInP2 and GaAs layers were 1.9 and 1.42 eV, respectively. The tandem combination of these two materials is lattice matched and has a theoretical efficiency of 34%.
Keywords :
CVD coatings; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; solar cells; 2.19 V; 21.8 percent; 700 degC; GaAs tunnel diode cell interconnect; GaInP2-GaAs solar cell; arsine; diethylzinc; lattice matched; metal-organic chemical vapor deposition; monolithic cascade solar cell; n-on-p cells; phosphine; semiconductor; tandem solar cell; trimethylgallium; trimethylindium; vertical flow MOCVD; Chemical vapor deposition; Diodes; Gallium arsenide; Gold; Hydrogen; Inductors; Lattices; MOCVD; Optical filters; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Solar power generation;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105809
