Title :
A new light trapping structure for very-thin, high-efficiency silicon solar cells
Author :
Uematsu, T. ; Ida, M. ; Hane, K. ; Hayashi, Y. ; Saitoh, T.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
A novel cell structure with aligned V-grooves on each side is proposed to realize very thin silicon solar cells. The thickness can be less than 50 mu m without reduction of mechanical strength. This structure provides a very high light-trapping effect. The light-generated current in this structure is calculated as 40.58 mA/cm2 under AM1.5 100 mW/cm2 sunlight. This structure is expected to realize high efficiency, close to the limiting efficiency of around 29% and to yield fruitful results in concentrator cells.
Keywords :
elemental semiconductors; semiconductor thin films; silicon; solar cells; 29 percent; Si solar cells; V-grooves; concentrator cells; high-efficiency; light trapping structure; mechanical strength; semiconductor; Anisotropic magnetoresistance; Corrugated surfaces; Crystallization; Etching; Fabrication; Laboratories; Photovoltaic cells; Silicon; Surface texture; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105813
