Title :
Scaleable non-linear and bias-dependent low-frequency noise model for improved InP HEMT based MMIC oscillator design
Author :
Schreurs, D. ; van Meer, H. ; van der Zanden, K. ; De Raedt, W. ; Nauwelaers, B.
Author_Institution :
ESAT, Katholieke Univ., Leuven, Heverlee, Belgium
Abstract :
This paper focuses on two modelling aspects to improve low phase noise MMIC oscillator design. As the modelling of InP based HEMTs has mainly been limited to the representation of the small-signal and thermal noise behaviour, we present a scaleable non-linear and bias-dependent low-frequency (LF) noise model
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC oscillators; equivalent circuits; field effect MMIC; indium compounds; integrated circuit design; integrated circuit modelling; integrated circuit noise; phase noise; semiconductor device models; semiconductor device noise; InP; InP HEMT based MMIC oscillator design; bias-dependent LF noise model; low phase noise oscillator; low-frequency noise model; scaleable nonlinear noise model; Analytical models; Circuit noise; Dispersion; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; Low-frequency noise; MMICs; Oscillators;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668597
