On the co-design between on-chip antennas and THz MOSFET direct detectors in CMOS technology

Author

Grzyb, J. ; Sherry, H. ; Cathelin, A. ; Kaiser, A. ; Pfeiffer, U.R.

Author_Institution

IHCT, Bergische Univ., Wuppertal, Germany

fYear

2012

fDate

23-28 Sept. 2012

Firstpage

1

Lastpage

3

Abstract

This paper reports on co-design between CMOS direct detectors and silicon lens-integrated on-chip antennas. Due the appropriate impedance characteristics of the differentially driven antenna, broadband detector operation over multiple hundred GHz centered around 900 GHz could be achieved. The overall pixel layout is fully compatible with an industry qualified CMOS technology.

Keywords

CMOS integrated circuits; MOSFET; elemental semiconductors; lens antennas; silicon; submillimetre wave antennas; submillimetre wave detectors; submillimetre wave integrated circuits; submillimetre wave transistors; terahertz wave detectors; Si; THz MOSFET direct detectors; broadband detector operation; differentially driven antenna; impedance characteristics; industry qualified CMOS technology; on-chip antenna codesign; silicon lens-integrated on-chip antennas; Antenna measurements; Broadband antennas; CMOS integrated circuits; Detectors; Impedance; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on

Conference_Location

Wollongong, NSW

ISSN

2162-2027

Print_ISBN

978-1-4673-1598-2

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/IRMMW-THz.2012.6380197

Filename

6380197