Title :
High Efficiency and ESD of GaN-Based LEDs With Patterned Ion-Damaged Current Blocking Layer
Author :
Keon Hwa Lee ; Yong-Tae Moon ; Seung Kyu Oh ; Joon Seop Kwak
Author_Institution :
Dept. of LED Bus., LG Innotek Co., Ltd., Paju, South Korea
Abstract :
This letter examined the use of a patterned ion-damaged current blocking layer (patterned-IDCBL). A 50-Å-InGaN layer grown as the top epitaxial layer was transformed into an insulator fabricated by oxygen plasma treatment, in which the dot patterns are regularly arranged over the active areas of the light-emitting diode (LED) and inserted beneath the p-electrode. The results showed that the light output power increased by 16.8% at 60 mA compared with the conventional LEDs, and that the electrostatic discharge resistance is effectively improved by the patterned-IDCBL.
Keywords :
III-V semiconductors; electrostatic discharge; gallium compounds; indium compounds; light emitting diodes; plasma materials processing; semiconductor epitaxial layers; wide band gap semiconductors; ESD; GaN-based LED; InGaN-GaN; active areas; current 60 mA; dot patterns; electrostatic discharge resistance; epitaxial layer; light output power; light-emitting diode; oxygen plasma treatment; p-electrode; patterned ion-damaged current blocking layer; Electrostatic discharges; Gallium nitride; Insulators; Light emitting diodes; Plasmas; Power generation; Resistance; Current blocking layer; Light-emitting diode; current blocking layer; electrostatic discharge;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2014.2362982
