High Efficiency and ESD of GaN-Based LEDs With Patterned Ion-Damaged Current Blocking Layer

Author

Keon Hwa Lee ; Yong-Tae Moon ; Seung Kyu Oh ; Joon Seop Kwak

Author_Institution

Dept. of LED Bus., LG Innotek Co., Ltd., Paju, South Korea

Volume

27

Issue

2

fYear

2015

fDate

Jan.15, 15 2015

Firstpage

149

Lastpage

152

Abstract

This letter examined the use of a patterned ion-damaged current blocking layer (patterned-IDCBL). A 50-Å-InGaN layer grown as the top epitaxial layer was transformed into an insulator fabricated by oxygen plasma treatment, in which the dot patterns are regularly arranged over the active areas of the light-emitting diode (LED) and inserted beneath the p-electrode. The results showed that the light output power increased by 16.8% at 60 mA compared with the conventional LEDs, and that the electrostatic discharge resistance is effectively improved by the patterned-IDCBL.

Keywords

III-V semiconductors; electrostatic discharge; gallium compounds; indium compounds; light emitting diodes; plasma materials processing; semiconductor epitaxial layers; wide band gap semiconductors; ESD; GaN-based LED; InGaN-GaN; active areas; current 60 mA; dot patterns; electrostatic discharge resistance; epitaxial layer; light output power; light-emitting diode; oxygen plasma treatment; p-electrode; patterned ion-damaged current blocking layer; Electrostatic discharges; Gallium nitride; Insulators; Light emitting diodes; Plasmas; Power generation; Resistance; Current blocking layer; Light-emitting diode; current blocking layer; electrostatic discharge;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2014.2362982

Filename

6928478