Title :
Present status and future prospects of InP solar cells
Author :
Yamaguchi, Masafumi
Author_Institution :
Opto-electron. Lab., NTT, Kanagawa, Japan
Abstract :
Recent progress in the research and development of high-efficiency and superior-radiation-resistance InP solar cells is reviewed. High-efficiency cells with total-area efficiencies greater than 20% at AM 1.5 and 18% at AM0 have been successfully fabricated. It is demonstrated that InP cells have more radiation resistance than Si or GaAs solar cells. The superior radiation tolerance of InP cells is concluded to be due to the lower migration energies of radiation-defects in InP compared to those in GaAs. The results show that InP cells have great potential for space power applications.
Keywords :
III-V semiconductors; indium compounds; solar cells; space vehicle power plants; III-V semiconductors; InP solar cells; efficiencies; migration energies; radiation resistance; research and development; space power; Diode lasers; Electron devices; Gallium arsenide; Indium phosphide; Laboratories; Photonic band gap; Photovoltaic cells; Research and development; Semiconductor materials; Surface resistance;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105829
