GEWE-RC MOSFET: A solution to CMOS technology for RFIC design based on the concept of intercept point

Author

Chaujar, R. ; Kaur, R. ; Saxena, M. ; Gupta, M. ; Gupta, R.S.

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi, New Delhi

fYear

2008

fDate

21-24 Nov. 2008

Firstpage

661

Lastpage

664

Abstract

In this paper, the linearity performance of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET is investigated using ATLAS device simulator, based on the concept of intercept point. Further, the impact of various technological parameter variations, such as gate length (L_G), negative junction depth (NJD), screening metal gate workfunction (Phi_M2) and substrate doping (N_A) on the linearity performance of GEWE-RC MOSFET, has been explored. Simulation results reveal that GEWE-RC MOSFET design exhibits significantly improved linearity characteristics, in comparison to the conventional Recessed Channel (RC) and bulk, based on third-order input intercept power (IIP3) desirable for RF and wireless communication designs.

Keywords

MOSFET; semiconductor doping; work function; ATLAS device simulator; CMOS technology; RFIC design; gate electrode workfunction engineered recessed channel MOSFET; gate length; intercept point; negative junction depth; screening metal gate workfunction; substrate doping; third-order input intercept power; CMOS technology; Degradation; Intermodulation distortion; Linearity; MOSFET circuits; Microwave devices; Microwave technology; Radio frequency; Radiofrequency integrated circuits; Semiconductor devices; ATLAS; GEWE; Intercept Point; Linearity; Recessed Channel MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on

Conference_Location

Jaipur

Print_ISBN

978-1-4244-2690-4

Electronic_ISBN

978-1-4244-2691-1

Type

conf

DOI

10.1109/AMTA.2008.4762978

Filename

4762978