Title :
GEWE-RC MOSFET: A solution to CMOS technology for RFIC design based on the concept of intercept point
Author :
Chaujar, R. ; Kaur, R. ; Saxena, M. ; Gupta, M. ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi
Abstract :
In this paper, the linearity performance of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET is investigated using ATLAS device simulator, based on the concept of intercept point. Further, the impact of various technological parameter variations, such as gate length (LG), negative junction depth (NJD), screening metal gate workfunction (PhiM2) and substrate doping (NA) on the linearity performance of GEWE-RC MOSFET, has been explored. Simulation results reveal that GEWE-RC MOSFET design exhibits significantly improved linearity characteristics, in comparison to the conventional Recessed Channel (RC) and bulk, based on third-order input intercept power (IIP3) desirable for RF and wireless communication designs.
Keywords :
MOSFET; semiconductor doping; work function; ATLAS device simulator; CMOS technology; RFIC design; gate electrode workfunction engineered recessed channel MOSFET; gate length; intercept point; negative junction depth; screening metal gate workfunction; substrate doping; third-order input intercept power; CMOS technology; Degradation; Intermodulation distortion; Linearity; MOSFET circuits; Microwave devices; Microwave technology; Radio frequency; Radiofrequency integrated circuits; Semiconductor devices; ATLAS; GEWE; Intercept Point; Linearity; Recessed Channel MOSFET;
Conference_Titel :
Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on
Conference_Location :
Jaipur
Print_ISBN :
978-1-4244-2690-4
Electronic_ISBN :
978-1-4244-2691-1
DOI :
10.1109/AMTA.2008.4762978
