DocumentCode
2509378
Title
Physical modelling of HBTs for microwave power applications
Author
McIntosh, Paul M. ; Snowden, Christopher M.
Author_Institution
Sch. of Electron. & Electr. Eng., Leeds Univ., UK
fYear
1997
fDate
24-25 Nov 1997
Firstpage
211
Lastpage
216
Abstract
This paper presents a one-dimensional HBT physical model which can accurately simulate the characteristics of microwave power transistors. The structure of the model is briefly discussed, and simulation results for a three layer device are presented and compared with analytical results. Measured and modelled DC characteristics for a power HBT are also presented, and these show good agreement over several decades of base and collector current
Keywords
heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; DC characteristics; HBT; microwave power transistor; one-dimensional physical model; simulation; three layer device; Analytical models; Charge carrier density; Current density; Current measurement; Doping profiles; Equivalent circuits; Heterojunction bipolar transistors; Microwave devices; Poisson equations; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location
London
Print_ISBN
0-7803-4135-X
Type
conf
DOI
10.1109/EDMO.1997.668601
Filename
668601
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