DocumentCode :
2509568
Title :
Performance of large area, thin silicon cells
Author :
Khemthong, S. ; Iles, P. ; Roberts, M. ; Karnopp, C. ; Senk, N.
Author_Institution :
Appl. Solar Energy Corp., City of Industry, CA, USA
fYear :
1988
fDate :
1988
Firstpage :
960
Abstract :
The author shows that cell manufacturers have established processing methods that produce cells that meet the requirements for electrical output, solar absorptivity, radiation resistance, contact performance, and environmental stability. In addition, some current cell designs are described that involve more complicated features such as the placement of all contacting areas on the back surface and a back surface contact that either has very high reflectance or high transparency for the wavelengths in the solar spectrum that are beyond the cutoff wavelength for silicon (>1.1 mu m). Many of the cell designs feature rugged, weldable contacts.
Keywords :
electrical contacts; elemental semiconductors; silicon; solar cells; 1.1 micron; Si solar cells; back surface contact; contact performance; electrical output; environmental stability; radiation resistance; reflectance; semiconductor; solar absorptivity; transparency; Binary search trees; Bonding; Coatings; Conductivity; Contact resistance; Electric resistance; Manufacturing processes; Metallization; Pulp manufacturing; Reflectivity; Silicon; Stability; Surface resistance; Surface waves; Temperature; Welding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105847
Filename :
105847
Link To Document :
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