DocumentCode
2509672
Title
Processing of GaAs solar cells
Author
La Roche, Guenther J.
Author_Institution
Messerschmitt-Boelkow-Blohm GmbH, Ottobrunn, West Germany
fYear
1988
fDate
1988
Firstpage
974
Abstract
The processability of GaAs solar cells using processes established for space-grade silicon solar cells was tested on a 140-piece sample. The welding parameters were adapted to the requirements of GaAs solar cells by a reduction of the welding time at increased voltage and improved electrode shape. The resulting degradation of the electrical characteristics after welding is comparable to those observed for Si solar cells. The yield of the production sample up to coupon level is comparable to that of Si solar cells. On a coupon consisting of 24 (2*4 cm) cells mounted on a carbon fiber composite substrate, high-resistance capability against deep thermal cycling between +80 degrees C and -170 degrees C was demonstrated.
Keywords
III-V semiconductors; electrodes; gallium arsenide; solar cells; welding; 80 to -170 degC; C fibre composite substrate; GaAs solar cells; Si solar cells; deep thermal cycling; electrical characteristics; electrode shape; high-resistance capability; processability; semiconductor; welding parameters; Degradation; Electric variables; Electrodes; Gallium arsenide; Photovoltaic cells; Shape; Silicon; Testing; Voltage; Welding;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105850
Filename
105850
Link To Document