• DocumentCode
    2509672
  • Title

    Processing of GaAs solar cells

  • Author

    La Roche, Guenther J.

  • Author_Institution
    Messerschmitt-Boelkow-Blohm GmbH, Ottobrunn, West Germany
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    974
  • Abstract
    The processability of GaAs solar cells using processes established for space-grade silicon solar cells was tested on a 140-piece sample. The welding parameters were adapted to the requirements of GaAs solar cells by a reduction of the welding time at increased voltage and improved electrode shape. The resulting degradation of the electrical characteristics after welding is comparable to those observed for Si solar cells. The yield of the production sample up to coupon level is comparable to that of Si solar cells. On a coupon consisting of 24 (2*4 cm) cells mounted on a carbon fiber composite substrate, high-resistance capability against deep thermal cycling between +80 degrees C and -170 degrees C was demonstrated.
  • Keywords
    III-V semiconductors; electrodes; gallium arsenide; solar cells; welding; 80 to -170 degC; C fibre composite substrate; GaAs solar cells; Si solar cells; deep thermal cycling; electrical characteristics; electrode shape; high-resistance capability; processability; semiconductor; welding parameters; Degradation; Electric variables; Electrodes; Gallium arsenide; Photovoltaic cells; Shape; Silicon; Testing; Voltage; Welding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105850
  • Filename
    105850