A proposed theoretical model of Impact Ionization rate under carrier degeneracy considering different scattering phenomena

Author

Banerjee, Soumen ; Banerjee, J.P.

Author_Institution

Inst. of Eng. & Manage., Kolkata

fYear

2008

fDate

21-24 Nov. 2008

Firstpage

708

Lastpage

711

Abstract

A theoretical model of Impact Ionization rate is proposed in this paper. Multistage scattering processes are considered which incorporate electron-electron scattering, hole-hole scattering, optical phonon scattering and impact ionization. The effect of high carrier concentration on carrier mobility and effective mass has been taken into account and the resulting modification in the ionization rate has been incorporated. The proposed theoretical model is simulated for GaAs and the results are found to be in close agreement with available experimental results.

Keywords

III-V semiconductors; carrier mobility; electron-electron scattering; gallium arsenide; impact ionisation; GaAs; carrier degeneracy; carrier mobility; effective mass; electron-electron scattering; high carrier concentration; hole-hole scattering; impact ionization rate; multistage scattering; optical phonon scattering; scattering phenomena; theoretical model; Charge carrier processes; Charge carriers; Conference management; Effective mass; Electron optics; Impact ionization; Optical scattering; Phonons; Probability; Radio spectrum management; Carrier Degeneracy; Impact Ionization; Scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on

Conference_Location

Jaipur

Print_ISBN

978-1-4244-2690-4

Electronic_ISBN

978-1-4244-2691-1

Type

conf

DOI

10.1109/AMTA.2008.4763014

Filename

4763014