DocumentCode
2510309
Title
Effect of noise on the performance of MODFET
Author
Sonti, V. J K Kishor ; Kannan, V.
Author_Institution
Sathyabama Univ., Chennai, India
fYear
2010
fDate
13-15 Nov. 2010
Firstpage
229
Lastpage
230
Abstract
In this paper, an analysis on the effect of noise on the performance of the MODFET was carried out. Here the MODFET model considered is of 0.25 × 200 um2 technology. The equivalent noise model is used and the transconductance with respect to frequency is analyzed and also the variation of the drain current with frequency is also analyzed under the influence of the noise. In this paper the work is carried out using PSPICE AD simulation software.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; semiconductor device noise; wide band gap semiconductors; AlGaN-GaN; MODFET model; PSPICE AD simulation software; drain current variation; equivalent noise model; noise effect; Aluminum gallium nitride; Analytical models; Frequency modulation; Gallium nitride; HEMTs; MODFETs; Noise; AlGaN/GaN; MODFET; drain current; thermal noise; transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Recent Advances in Space Technology Services and Climate Change (RSTSCC), 2010
Conference_Location
Chennai
Print_ISBN
978-1-4244-9184-1
Type
conf
DOI
10.1109/RSTSCC.2010.5712840
Filename
5712840
Link To Document