Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs

Author

Mishra, U.K. ; Brown, A.S. ; Jelloian, L.M. ; Thompson, M. ; Nguyen, L.D. ; Rosenbaum, S.E.

Author_Institution

North Carolina State Univ., Raleigh, NC, USA

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

101

Lastpage

104

Abstract

A novel self-aligned technique for 0.15- mu m-gate-length HEMTs (high electron mobility transistors) has been demonstrated. This technology uses a 0.15- mu m-long T-gate structure defined by e-beam lithography with a SiO/sub 2/ sidewall to implement the self-aligned scheme. The resultant device has low source and drain resistances, low gate resistance (200 Omega /mm), and a passivating layer over the active channel. Devices with an oxide sidewall yielded an f/sub T/ of 177 GHz, whereas devices with no sidewall exhibited an f/sub T/ greater than 250 GHz. The difference has been related to process damage during plasma deposition of SiO/sub 2/.<>

Keywords

III-V semiconductors; aluminium compounds; electron beam lithography; gallium arsenide; high electron mobility transistors; indium compounds; passivation; 0.15 micron; AlInAs-GaInAs; HEMTs; SiO/sub 2/; T-gate structure; active channel; drain resistances; e-beam lithography; gate resistance; oxide sidewall; passivating layer; plasma deposition; process damage; self-aligned technique; sidewall; source resistances; Etching; HEMTs; Implants; Lithography; MODFETs; Plasma applications; Plasma devices; Plasma immersion ion implantation; Plasma temperature; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74237

Filename

74237