Title :
High TCR of VOx thin films fabricated by metal-organic decomposition for bolometer detectors
Author :
Son, L.N. ; Tachiki, T. ; Uchida, T.
Author_Institution :
Nat. Defense Acad., Yokosuka, Japan
Abstract :
VOx thin films were fabricated on fused quartz substrates by metal-organic decomposition. In R-T characteristics, VOx films indicated an abrupt phase transition around 52°C with a resistivity change of 3-4 orders and temperature coefficient of resistance of 4.4-4.8 %/K at 300 K.
Keywords :
electrical resistivity; thin films; vanadium compounds; R-T characteristics; SiO2; TCR; VOx; bolometer detectors; fused quartz substrate; metal-organic decomposition; phase transition; resistance-temperature characteristics; resistivity; temperature 300 K; temperature coefficient of resistance; thin films; Bolometers; Conductivity; Films; Sensitivity; Silicon; Substrates; Temperature;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380256
