Title :
Vertical scaling of ultra-high-speed AlInAs-GaInAs HEMTs
Author :
Nguyen, L. ; Brown, A. ; Delaney, M. ; Mishra, U. ; Larson, L. ; Jelloian, L. ; Melendes, M. ; Hooper, C. ; Thompson, M.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
Abstract :
The scaling of the vertical dimensions of 0.15- mu m-gate-length Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As high-electron-mobility transistors (HEMTs) to reduce their well-known excessive gate leakage current, premature breakdown voltage, and poor output conductance is discussed. It is found that, with a proper choice of doping densities and layer thicknesses, it is possible to realize very-high-performance AlInAs-GaInAs HEMTs (f/sub T/=160 GHz, f/sub max/=300 GHz for 0.15- mu m*50- mu m devices) with low gate leakage current, high breakdown voltage (7.0 V), and very low DC output conductance (45-mS/mm). The DC output conductance exhibits a very strong dependence on the AlInAs doping-thickness product and appears to be a limiting factor in the device power gain. By reducing the doping-thickness product, it was possible to reduce the output conductance by a factor of 3 and thus increase the power gain cutoff frequency by a factor of 1.7.<>
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; high electron mobility transistors; indium compounds; 0.15 micron; AlInAs-GaInAs; DC output conductance; HEMTs; breakdown voltage; device power gain; doping densities; excessive gate leakage current; gate leakage current; high-electron-mobility transistors; layer thicknesses; output conductance; power gain cutoff frequency; premature breakdown voltage; scaling; vertical dimensions; Capacitance; Dielectrics; Doping; Epitaxial layers; HEMTs; Leakage current; MODFETs; Neodymium; Schottky barriers; Voltage control;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74238
