W-band high bit passive phase shifter for automotive radar applications in BiCMOS

Author

Deng, Xiong ; He, Zhaosheng ; Yuan, Shitong ; Shao, ZhenHai ; Liu, Lianfu

Author_Institution

Greating-UESTC Joint Exp. Eng. Center, Univ. of Electron. Sci. & Technol. of China, Cheng Du, China

fYear

2011

fDate

21-23 Oct. 2011

Firstpage

115

Lastpage

119

Abstract

This paper presents a 65-85 GHz 5-bit passive phase shifter at the desired frequency of 77 GHz, using CMOS switches available in the 0.13 μm SiGe BiCMOS process. The phase shifter is based on a low-pass π-network and CMOS passive transistors. The RMS phase error, the insertion loss and the VSWR is less than 3.5°, -20 dB and 2 at 77 GHz respectively, so it is possible to precede this design with a high gain LNA without loss of system linearity or input power handling and it is convenient for afterwards signal processing.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; microwave switches; millimetre wave integrated circuits; millimetre wave phase shifters; road vehicle radar; BiCMOS process; CMOS passive transistors; CMOS switches; RMS phase error; SiGe; W-band high bit passive phase shifter; automotive radar applications; frequency 65 GHz to 85 GHz; high gain LNA; input power handling; insertion loss; low-pass π-network; signal processing; size 0.13 mum; system linearity; word length 5 bit; Arrays; CMOS integrated circuits; Delay; Insertion loss; Phase shifters; Substrates; Transistors; BiCMOS; MOSFET switch; W-band; high bit; millimeter wave; phase shifter; phased array;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Problem-Solving (ICCP), 2011 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4577-0602-8

Electronic_ISBN

978-1-4577-0601-1

Type

conf

DOI

10.1109/ICCPS.2011.6092220

Filename

6092220