DocumentCode
2510781
Title
Optical response of Quantum Dot Transistor with front side illumination
Author
Vijayakumar, Viji ; Seshasayanan, R.
Author_Institution
Sathyabama Univ., Chennai, India
fYear
2010
fDate
13-15 Nov. 2010
Firstpage
290
Lastpage
292
Abstract
The theoretical work for the DC performance of Quantum Dot Transistor under Front side illumination is presented. A device structure consist of Quantum Dots in the GaAs layer is considered for illumination. The photoconductive effect in the GaAs and QD layer which increases the 2DEG Channel electron concentration is considered. The I-V Characteristics of Quantum Dot Transistor, under dark and illumination condition have been evaluated, plotted and discussed.
Keywords
III-V semiconductors; gallium arsenide; photoconductivity; semiconductor quantum dots; transistors; 2DEG channel electron concentration; GaAs; I-V characteristics; QD layer; device structure; front side illumination; optical response; photoconductive effect; quantum dot transistor; Gallium arsenide; Lighting; Logic gates; Optical saturation; Photonics; Quantum dots; Transistors; 2DEG; DC illumination; Photoconductive effect; Quantum Dot Transistor(QDT);
fLanguage
English
Publisher
ieee
Conference_Titel
Recent Advances in Space Technology Services and Climate Change (RSTSCC), 2010
Conference_Location
Chennai
Print_ISBN
978-1-4244-9184-1
Type
conf
DOI
10.1109/RSTSCC.2010.5712862
Filename
5712862
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