DocumentCode :
2510832
Title :
High frequency performance of GaAsSb/InAlAs/InGaAs tunnel diodes at 220 GHz
Author :
Patrashin, M. ; Sekine, N. ; Kasamatsu, A. ; Watanabe, I. ; Hosako, I. ; Takahashi, T. ; Sato, M. ; Nakasha, Y. ; Hara, N.
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan
fYear :
2012
fDate :
23-28 Sept. 2012
Firstpage :
1
Lastpage :
2
Abstract :
We evaluated performance of zero-bias, square-law GaAsSb/InAlAs/InGaAs tunnel diodes at frequencies up to 220 GHz. The detectors with submicron cross-sectional area demonstrated sensitivities above 500 V/W, and curvature coefficients of 20 V-1.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; millimetre wave diodes; tunnel diodes; GaAsSb-InAlAs-InGaAs; curvature coefficients; frequency 220 GHz; square-law tunnel diodes; submicron cross-sectional area; zero-bias; Current measurement; Detectors; Indium gallium arsenide; Semiconductor diodes; Sensitivity; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
ISSN :
2162-2027
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
Type :
conf
DOI :
10.1109/IRMMW-THz.2012.6380282
Filename :
6380282
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2510832
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