The adjustable nanosecond pulse generation based on highl-voltage MOSFET

Author

Wu, Jianxing ; Cao, Yuanqing ; Li, Hongtao ; Yang, Hongchun ; Wang, Qiang

Author_Institution

Inst. of Phys. Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2011

fDate

21-23 Oct. 2011

Firstpage

366

Lastpage

369

Abstract

A computer-controlled adjustable nanosecond pulse generator based on high-voltage MOSFET is designed in this paper, which owns stable performance and miniaturization profile of 32×30×7 cm³. The experiment results show that the pulser can generate electrical pulse with Gaussian rising time of 20 nanosecond, section-adjustable index falling time of 40-200 nanosecond, continuously adjustable repitition frequency of 0-5 kHz, quasi-continuously adjustable amplitude of 0-1 kV at 50 Ω load. And the pulser could meet the requirement.

Keywords

Gaussian processes; MOSFET; pulse generators; Gaussian rising time; adjustable nanosecond pulse generation; computer-controlled adjustable nanosecond pulse generator; continuously adjustable repitition frequency; electrical pulse; frequency 0 kHz to 5 kHz; high-voltage MOSFET; miniaturization profile; quasi-continuously adjustable amplitude; resistance 50 ohm; section-adjustable index falling time; stable performance; time 20 ns; time 40 ns to 200 ns; voltage 0 kV to 1 kV; Capacitance; Indexes; Power MOSFET; Pulse generation; Switches; Windings; MOSFET; computer-controlled; nanosecond; pulse source; transformer winding deformaton;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Problem-Solving (ICCP), 2011 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4577-0602-8

Electronic_ISBN

978-1-4577-0601-1

Type

conf

DOI

10.1109/ICCPS.2011.6092231

Filename

6092231