Title :
High performance complementary logic based on GaAs/InGaAs/AlGaAs HIGFETs
Author :
Ruden, P.P. ; Akinwande, A.I. ; Narum, D. ; Grider, D.E. ; Nohava, J.
Author_Institution :
Honeywell Syst. & Res. Center, Bloomington, MN, USA
Abstract :
Results for planar, self-aligned gate, complementary, pseudomorphic GaAs-InGaAs-AlGaAs HIGFET devices are presented. The gate leakage is found to be controllable by increasing the AlAs molar fraction in the barrier layer. A planar n-doped layer beneath the InGaAs channel is shown to shift the threshold voltages of the devices and to reduce considerably the output conductance of the p-channel FET. The operation of complementary inverters depends sensitively on the relative values of supply voltage and gate turn-on voltages. Large inverter noise margins are demonstrated, and the power and speed of complementary ring oscillators are discussed.<>
Keywords :
III-V semiconductors; aluminium compounds; digital integrated circuits; field effect integrated circuits; gallium arsenide; indium compounds; insulated gate field effect transistors; logic gates; GaAs-InGaAs-AlGaAs pseudomorphic device; barrier layer; complementary inverters; complementary logic; complementary ring oscillators; gate leakage; gate turn-on voltages; inverter noise margins; molar fraction; p-channel FET; planar n-doped layer; self-aligned gate; supply voltage; threshold voltages; CMOS technology; Circuits; Gallium arsenide; HEMTs; Implants; Indium gallium arsenide; Inverters; Logic; MODFETs; Power dissipation;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74241
