DocumentCode
2511215
Title
Development in silicon sheet technologies
Author
Goetzberger, A. ; Räuber, A.
Author_Institution
Fraunhofere Inst. fuer Solare Energiesysteme, Freiburg, West Germany
fYear
1988
fDate
1988
Firstpage
1371
Abstract
The status of techniques for the production of sheets, ribbons, and foils of silicon for solar cells is reviewed. Technical problems and economic constraints are analyzed. The horizontal support web technique relies on a wedge-shaped growth interface which decouples the pulling velocity and the growth velocity which are nearly perpendicular to each other. The growing ribbon floats on a silicon melt that is contained in a long silicon crucible and is withdrawn to one side. In the ramp assistant foil technique, the silicon melt is contained in a relatively flat crucible that is open on one side. A preheated substrate is moved across this opening, and some of the melt solidifies on the surface. The silicon-sheets-from-powder technique starts from Si powder or granular silicon (grain size: 50-500 mu m). Three steps are needed to obtain the final ribbon. It is concluded that although the basic ideas as well as the results of these three methods are very distinct, evaluation of their respective merits is difficult.
Keywords
crystal growth from melt; elemental semiconductors; semiconductor growth; silicon; Si; Si melt; crucible; foils; growth velocity; horizontal support web technique; preheated substrate; pulling velocity; ramp assistant foil technique; ribbons; sheets; silicon-sheets-from-powder technique; solar cells; wedge-shaped growth interface; Chemical technology; Crystalline materials; Crystals; Grain size; Laboratories; Photovoltaic cells; Powders; Power generation economics; Production; Sheet materials; Silicon; Surface cleaning;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105932
Filename
105932
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