Title :
Ballistic performance comparison of InGaSb and InAsSb XOI nFET
Author :
Alam, Md Nur Kutubul ; Islam, Md Shariful ; Islam, Md Rafiqul
Author_Institution :
Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh
Abstract :
Ballistic performance of nanoscale InGaSb and InAsSb XOI n-FET is compared using non equilibrium greens function (NEGF) method. The simulation results demonstrate that the ballistic performance is opposite to what is expected if the devices were long channel MOSFET. Although InAsSb possesses higher bulk electron mobility, but in ballistic regime, InGaSb gives higher drain current along with better subthreshold characteristic and reduced threshold voltage, if the off state current for both material is made equal.
Keywords :
III-V semiconductors; MOSFET; ballistic transport; electron mobility; field effect transistors; gallium compounds; indium compounds; InAsSb; InGaSb; NEGF method; ballistic performance; bulk electron mobility; long channel MOSFET; nanoscale XOI nFET; nonequilibrium greens function method; x-on-insulator; Effective mass; Field effect transistors; Logic gates; Performance evaluation; Silicon; Threshold voltage; Ballistic transport; InAsSb; InGaSb; NEGF; XOI;
Conference_Titel :
Electrical and Computer Engineering (ICECE), 2014 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4799-4167-4
DOI :
10.1109/ICECE.2014.7026842
