Ballistic performance comparison of InGaSb and InAsSb XOI nFET

Author

Alam, Md Nur Kutubul ; Islam, Md Shariful ; Islam, Md Rafiqul

Author_Institution

Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh

fYear

2014

fDate

20-22 Dec. 2014

Firstpage

659

Lastpage

662

Abstract

Ballistic performance of nanoscale InGaSb and InAsSb XOI n-FET is compared using non equilibrium greens function (NEGF) method. The simulation results demonstrate that the ballistic performance is opposite to what is expected if the devices were long channel MOSFET. Although InAsSb possesses higher bulk electron mobility, but in ballistic regime, InGaSb gives higher drain current along with better subthreshold characteristic and reduced threshold voltage, if the off state current for both material is made equal.

Keywords

III-V semiconductors; MOSFET; ballistic transport; electron mobility; field effect transistors; gallium compounds; indium compounds; InAsSb; InGaSb; NEGF method; ballistic performance; bulk electron mobility; long channel MOSFET; nanoscale XOI nFET; nonequilibrium greens function method; x-on-insulator; Effective mass; Field effect transistors; Logic gates; Performance evaluation; Silicon; Threshold voltage; Ballistic transport; InAsSb; InGaSb; NEGF; XOI;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering (ICECE), 2014 International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4799-4167-4

Type

conf

DOI

10.1109/ICECE.2014.7026842

Filename

7026842