Recrystallized silicon thin film structure for solar cells

The technological sequence for the realization of crystalline silicon thin-film solar cells is described. The sequence consists of the deposition of an oxide layer (thermal or by PECVD) on different substrates (monocrystalline or polycrystalline silicon), etching of windows into this layer by means of a photolithographic process, deposition of microcrystalline Si layers (by LPCVD) on top of the oxide layer, and recrystallization of these Si layers by a special surface melting technique. During solidification, substantial grain growth is observed leading to grain diameters in the millimeter range. This is due to a special seeding technique.