Preparation and properties of CuInSe2 solar cells with a ZnSe intermediate layer

CuInSe₂-based solar cells were prepared by thermal evaporation using CdS and In₂O₃ as window layers, with a thin ZnSe layer between the window layer and the CuInSe₂. The effects of ZnSe with thicknesses between 200 AA and 2000 AA and ZnSe deposition temperatures between 100 degrees C and 200 degrees C were investigated. For the CdS:In/CdS/ZnSe/CuInSe₂ cells, as the ZnSe thickness increases, J₀ decreases and/or the diode factor A increases. For the In₂O₃/ZnSe/CuInSe₂ cells the change of J₀ is much less and there is an increase in the diode factor for increasing ZnSe thickness. Under illumination, the V_oc of the cell is the same with and without ZnSe and the cells with ZnSe layers thicker than 400 AA show strong photosuppression.