Title :
80–100GHz sub-harmonically and fourth-harmonically pumped doide mixers using 0.1µm GaAs pHEMT process
Author :
Kang, Minsoo ; Kim, Bongsu ; Kim, Kwangseon ; Byun, Woojin
Author_Institution :
Radio Technol. Res. Group, ETRI, Daejeon, South Korea
Abstract :
80-100GHz sub-harmonically pumped(SHP) and fourth-harmonic pumped (FHP)mixers are designed for point-to-point(P2P) communications. They are fabricated on a 2-mil 0.1μm GaAs pHEMT process. From measured results, SHP mixer shows conversion loss of 9.5 ~ 11dB and input P1dB of +2dBm with LO signal of 40 ~ 44GHz. FHP mixer has conversion loss of 16 ~ 17dB and input P1dB of -2dBm with LO signal of 20 ~ 23GHz.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; millimetre wave diodes; millimetre wave mixers; millimetre wave transistors; radio links; GaAs; GaAs pHEMT process; fourth-harmonically pumped diode mixers; frequency 80 GHz to 100 GHz; loss 16 dB to 17 dB; loss 9.5 dB to 11 dB; point-to-point communications; size 0.1 mum; sub-harmonically pumped diode mixers; Mixers; Radio frequency;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380316
