Title :
Device analysis of CuInSe2 solar cells
Author :
Mitchell, K.W. ; Liu, H.I.
Author_Institution :
ARCO Solar Inc., Camarillo, CA, USA
Abstract :
Analyses are presented of greater than 12% efficient ZnO/thin CdS/CIS devices, focusing on spectral response and light and dark current-voltage (I-V) over a broad range of intensities (0.64-100 mW/cm2) and temperatures (100-300 K). Other measurements presented include voltage-dependent spectral response, capacitance-conductance versus voltage, frequency, temperature, and CIS film and contact resistance. It is found that recombination controls device performance above 200 K and tunneling and series resistance dominate low-temperature device behavior. 14.1%, 3.5 cm2 active area cell and 11.2%, 938 cm2 module aperture area efficiencies are reported.
Keywords :
contact resistance; copper compounds; electron-hole recombination; indium compounds; solar cells; ternary semiconductors; tunnelling; 100 to 300 K; 11.2 percent; 12 percent; 14.1 percent; ZnO-CdS-CuInSe2 solar cells; capacitance-conductance; contact resistance; dark current-voltage; frequency; light current voltage; low-temperature device behavior; recombination; semiconductor; series resistance; spectral response; temperature; tunneling; voltage-dependent spectral response; Capacitance measurement; Computational Intelligence Society; Contact resistance; Current measurement; Electrical resistance measurement; Frequency measurement; Temperature distribution; Tunneling; Voltage; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105952
