• DocumentCode
    2511644
  • Title

    Device analysis of CuInSe2 solar cells

  • Author

    Mitchell, K.W. ; Liu, H.I.

  • Author_Institution
    ARCO Solar Inc., Camarillo, CA, USA
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    1461
  • Abstract
    Analyses are presented of greater than 12% efficient ZnO/thin CdS/CIS devices, focusing on spectral response and light and dark current-voltage (I-V) over a broad range of intensities (0.64-100 mW/cm2) and temperatures (100-300 K). Other measurements presented include voltage-dependent spectral response, capacitance-conductance versus voltage, frequency, temperature, and CIS film and contact resistance. It is found that recombination controls device performance above 200 K and tunneling and series resistance dominate low-temperature device behavior. 14.1%, 3.5 cm2 active area cell and 11.2%, 938 cm2 module aperture area efficiencies are reported.
  • Keywords
    contact resistance; copper compounds; electron-hole recombination; indium compounds; solar cells; ternary semiconductors; tunnelling; 100 to 300 K; 11.2 percent; 12 percent; 14.1 percent; ZnO-CdS-CuInSe2 solar cells; capacitance-conductance; contact resistance; dark current-voltage; frequency; light current voltage; low-temperature device behavior; recombination; semiconductor; series resistance; spectral response; temperature; tunneling; voltage-dependent spectral response; Capacitance measurement; Computational Intelligence Society; Contact resistance; Current measurement; Electrical resistance measurement; Frequency measurement; Temperature distribution; Tunneling; Voltage; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105952
  • Filename
    105952
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2511644