Title :
A novel self-aligned SiGe HBT structure using selective and non-selective epitaxy
Author :
Schiz, J. ; Bonar, J.M ; Ashburn, P.
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
Abstract :
A novel self-aligned SiGe HBT structure using selective and nos-selective epitaxy is proposed. It is shown that damage in the silicon substrate induced by reactive ion etching can be effectively removed and that this allows the growth of high quality selective and non-selective epitaxy. It is also shown in that selective epitaxy followed by non-selective epitaxy can be performed in one process step while controlling the base thickness and doping
Keywords :
Ge-Si alloys; epitaxial growth; heterojunction bipolar transistors; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor growth; semiconductor materials; sputter etching; RIE; Si; Si substrate damage; SiGe-Si; nonselective epitaxy; reactive ion etching; selective epitaxy; self-aligned SiGe HBT structure; Capacitance; Cutoff frequency; Doping; Epitaxial growth; Etching; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Substrates;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668612
