Properties of copper indium diselenide thin films produced by thermal annealing of elemental sandwich structures

Author

Knowles, A. ; Oumous, H. ; Carter, M.J. ; Hill, R.

Author_Institution

Dept. of Phys., Newcastle upon Tyne Polytech., UK

fYear

1988

fDate

1988

Firstpage

1482

Abstract

Results of optical and compositional analyses of films for solar cells produced by thermal annealing of elemental layer structures are presented and compared with data from laser processed structures. The variation of resistivity with composition is shown. Using conventional large-area vacuum deposition techniques, copper, indium, and selenium were evaporated in the form of a sandwich, which was then thermally annealed. Chalcopyrite copper indium diselenide, of both p- and n-type conductivity, was formed with satisfactory optical and electrical properties.

Keywords

annealing; copper compounds; electronic conduction in crystalline semiconductor thin films; indium compounds; semiconductor thin films; solar cells; ternary semiconductors; vacuum deposited coatings; Cu-In-Se; CuInSe₂ thin films; electrical properties; elemental sandwich structures; n-type conductivity; optical properties; p-type conductivity; semiconductor; solar cells; thermal annealing; vacuum deposition techniques; Annealing; Conductivity; Continuous production; Copper; Indium; Optical feedback; Optical films; Optical materials; Photovoltaic cells; Reproducibility of results; Sandwich structures; Semiconductor lasers; Transistors; Vacuum technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE

Conference_Location

Las Vegas, NV, USA

Type

conf

DOI

10.1109/PVSC.1988.105956

Filename

105956