DocumentCode :
2511691
Title :
Properties of copper indium diselenide thin films produced by thermal annealing of elemental sandwich structures
Author :
Knowles, A. ; Oumous, H. ; Carter, M.J. ; Hill, R.
Author_Institution :
Dept. of Phys., Newcastle upon Tyne Polytech., UK
fYear :
1988
fDate :
1988
Firstpage :
1482
Abstract :
Results of optical and compositional analyses of films for solar cells produced by thermal annealing of elemental layer structures are presented and compared with data from laser processed structures. The variation of resistivity with composition is shown. Using conventional large-area vacuum deposition techniques, copper, indium, and selenium were evaporated in the form of a sandwich, which was then thermally annealed. Chalcopyrite copper indium diselenide, of both p- and n-type conductivity, was formed with satisfactory optical and electrical properties.
Keywords :
annealing; copper compounds; electronic conduction in crystalline semiconductor thin films; indium compounds; semiconductor thin films; solar cells; ternary semiconductors; vacuum deposited coatings; Cu-In-Se; CuInSe2 thin films; electrical properties; elemental sandwich structures; n-type conductivity; optical properties; p-type conductivity; semiconductor; solar cells; thermal annealing; vacuum deposition techniques; Annealing; Conductivity; Continuous production; Copper; Indium; Optical feedback; Optical films; Optical materials; Photovoltaic cells; Reproducibility of results; Sandwich structures; Semiconductor lasers; Transistors; Vacuum technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105956
Filename :
105956
Link To Document :
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