Time-resolved electronic capture in germanium doped with hydrogen-like impurity centers

Author

Dessmann, N. ; Pavlov, S.G. ; Shastin, V.N. ; Zhukavin, R. Kh ; Winnerl, S. ; Mittendorff, M. ; Hübers, H. -W

Author_Institution

Inst. fur Opt. und Atomare Phys., Tech. Univ. Berlin, Berlin, Germany

fYear

2012

fDate

23-28 Sept. 2012

Firstpage

1

Lastpage

2

Abstract

The capture of free holes and electrons in germanium (Ge) doped by gallium (Ga) or antimony (Sb) has been studied by a time-resolved pump-probe experiment with the free-electron laser FELBE at the Helmholtz-Zentrum Dresden-Rossendorf. For Ga acceptors the relaxation times decrease with increasing pump power from approximately 3 ns to 1 ns (2 ns and 1 ns for Sb donors, respectively). The results support the development of fast photoconductive detectors in the terahertz frequency range.

Keywords

antimony; carrier relaxation time; elemental semiconductors; free electron lasers; gallium; germanium; impurity states; photodetectors; time resolved spectra; Ge:Ga; Ge:Sb; Helmholtz-Zentrum Dresden-Rossendorf; antimony donor; antimony doped germanium; free electron laser; free holes; gallium acceptors; gallium doped germanium; hydrogen-like impurity center; photoconductive detectors; relaxation times; terahertz frequency range; time resolved electronic capture; time resolved pump-probe experiment; Detectors; Gallium; Germanium; Impurities; Laser excitation; Mathematical model; Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on

Conference_Location

Wollongong, NSW

ISSN

2162-2027

Print_ISBN

978-1-4673-1598-2

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/IRMMW-THz.2012.6380321

Filename

6380321