DocumentCode :
2511883
Title :
Phase-shifted 1.3-µm dual-mode laser diode: Toward single chip terahertz emitter
Author :
Kim, Namje ; Han, Sang-Pil ; Ko, Hyunsung ; Ryu, Han-Cheol ; Park, Jeong-Woo ; Lee, Donghun ; Jeon, Min Yong ; Park, Kyung Hyun
Author_Institution :
THz Photonics Creative Res. Center, ETRI, Daejeon, South Korea
fYear :
2012
fDate :
23-28 Sept. 2012
Firstpage :
1
Lastpage :
2
Abstract :
We have developed the λ/4 phase-shifted 1.3-μm dual mode laser as an optical beat source of continuous-wave (CW) terahertz (THz) generation. The mode beat frequency is continuously tuned from 230 to 1485 GHz via integrated micro-heaters. The CW THz system is also demonstrated with low-temperature-grown InGaAs photomixers.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; micro-optics; optical phase shifters; semiconductor lasers; terahertz wave generation; λ/4 phase-shifted dual mode laser; InGaAs; continuous tuning; continuous-wave terahertz generation; integrated microheaters; low-temperature-grown InGaAs photomixers; optical beat source; phase-shifted dual-mode laser diode; single chip terahertz emitter; wavelength 1.3 mum; Indium gallium arsenide; Optical amplifiers; Optical device fabrication; Optical fibers; Optical polarization; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
ISSN :
2162-2027
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
Type :
conf
DOI :
10.1109/IRMMW-THz.2012.6380329
Filename :
6380329
Link To Document :
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