Title :
7.3% efficient CuInSe2 solar cell
Author :
Mitchell, K.W. ; Pollock, G.A. ; Mason, A.V.
Author_Institution :
ARCO Solar Inc., Camarillo, CA, USA
Abstract :
A 7.3%, 3.3 cm2 active area efficient ZnO/thin CdS/CuInS2 solar cell is demonstrated with 22.7 mA/cm2 Jsc, 592 mV Voc, and 0.546 fill factor. X-ray diffraction shows that the CuInS2 films with are predominantly randomly oriented chalcopyrite CuInS2 with additional minor phases such as In2S3 and Cu2-xS present. Optical transmission and reflection data for CuInS2 films on glass are also shown. Optical transmission implies a 1.4-eV bandgap, less than the 1.55-eV bandgap for single-crystal CuInS2, but consistent with other reported thin-film results. It is concluded that the resolution of several materials, device, and fabrication issues will result in efficiencies of greater than 15%.
Keywords :
copper compounds; solar cells; ternary semiconductors; 1.4 eV; 3.3 cm; 7.3 percent; CuInSe2 solar cell; X-ray diffraction; ZnO-CdS-CuInS2; fabrication; optical reflection; optical transmission; randomly oriented chalcopyrite; resolution; Glass; Optical device fabrication; Optical diffraction; Optical films; Optical materials; Optical reflection; Photonic band gap; Photovoltaic cells; X-ray diffraction; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105967
