• DocumentCode
    2511937
  • Title

    7.3% efficient CuInSe2 solar cell

  • Author

    Mitchell, K.W. ; Pollock, G.A. ; Mason, A.V.

  • Author_Institution
    ARCO Solar Inc., Camarillo, CA, USA
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    1542
  • Abstract
    A 7.3%, 3.3 cm2 active area efficient ZnO/thin CdS/CuInS2 solar cell is demonstrated with 22.7 mA/cm2 Jsc, 592 mV Voc, and 0.546 fill factor. X-ray diffraction shows that the CuInS2 films with are predominantly randomly oriented chalcopyrite CuInS2 with additional minor phases such as In2S3 and Cu2-xS present. Optical transmission and reflection data for CuInS2 films on glass are also shown. Optical transmission implies a 1.4-eV bandgap, less than the 1.55-eV bandgap for single-crystal CuInS2, but consistent with other reported thin-film results. It is concluded that the resolution of several materials, device, and fabrication issues will result in efficiencies of greater than 15%.
  • Keywords
    copper compounds; solar cells; ternary semiconductors; 1.4 eV; 3.3 cm; 7.3 percent; CuInSe2 solar cell; X-ray diffraction; ZnO-CdS-CuInS2; fabrication; optical reflection; optical transmission; randomly oriented chalcopyrite; resolution; Glass; Optical device fabrication; Optical diffraction; Optical films; Optical materials; Optical reflection; Photonic band gap; Photovoltaic cells; X-ray diffraction; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105967
  • Filename
    105967