• DocumentCode
    2511955
  • Title

    Thermal buckling of silicon sheet

  • Author

    Tsai, C.T. ; Dillon, O.W. ; De Angelis, R.J.

  • Author_Institution
    Kentucky Univ., Lexington, KY, USA
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    1545
  • Abstract
    Results of buckling analyses for three closely related thermal profiles are discussed. They come from the same basic furnace design but reflect changes that occur in the thermal profile when different pull speeds are used to produce wider or thicker ribbon. It is shown that the three profiles differ near the solid-melt interface. Details of the calculation procedure for the in-plane stresses are also given. The shapes associated with the first three modes for each profile are shown. The shape of the first mode for each thermal profile is different. This is primarily due to differing geometry associated with the different pull speeds.
  • Keywords
    crystal growth from melt; elemental semiconductors; internal stresses; semiconductor growth; silicon; Si sheet; furnace design; in-plane stresses; pull speeds; ribbon; semiconductor; solid-melt interface; thermal buckling; thermal profiles; Boundary conditions; Equations; Furnaces; Geometry; Large-scale systems; Photovoltaic systems; Residual stresses; Shape; Silicon; Solar power generation; Thermal force; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105968
  • Filename
    105968