• DocumentCode
    2511972
  • Title

    Thermal behavior of InGaAs-THz photoconductive antennas

  • Author

    Peters, O. ; Schwerdtfeger, M. ; Dietz, R.J.B. ; Wilk, R. ; Scheunemann, R. ; Holzwarth, R. ; Koch, M.

  • Author_Institution
    Fachbereich Phys., Philipps-Univ. of Marburg, Marburg, Germany
  • fYear
    2012
  • fDate
    23-28 Sept. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    While most scientific experiments take place in a controlled laboratory environment systems for industrial applications have to cope with instable temperatures. We investigate the performance of InGaAs/InAlAs THz antennas for the temperature from -20 to 80 degrees Celsius.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; photoconducting devices; submillimetre wave antennas; InGaAs-InAlAs; THz photoconductive antennas; controlled laboratory environment systems; industrial applications; instable temperatures; temperature -20 degC to 80 degC; thermal behavior; Antenna measurements; Antennas; Detectors; Signal to noise ratio; Temperature distribution; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
  • Conference_Location
    Wollongong, NSW
  • ISSN
    2162-2027
  • Print_ISBN
    978-1-4673-1598-2
  • Electronic_ISBN
    2162-2027
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2012.6380334
  • Filename
    6380334
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2511972