DocumentCode :
2512023
Title :
Bifacial inversion layer solar cells with multicrystalline silicon substrates
Author :
Hezel, R. ; Jaeger, K.
Author_Institution :
Inst. fuer Werkstoffwissenschaften, Erlangen-Nurnberg Univ., West Germany
fYear :
1988
fDate :
1988
Firstpage :
1560
Abstract :
The fabrication of MIS inversion-layer solar cells with bifacial sensitivity on low-cost multicrystalline silicon (Wacker Silso) is presented. A rear-side configuration consisting of a coarse-gridded ohmic contact and a plasma silicon nitride film, which acts as a passivating and optical coating film, was used. The thickness dependence of the solar cell data in the range from 385 mu m down to 130 mu m is presented for both front and back illumination and confirmed by theoretical calculations. An AM1 efficiency of 13.5% for the front side and 7.8% for the rear side was obtained from a 140- mu m-thick bifacial multicrystalline MIS-IL solar cell without grain boundary passivation. From the thickness dependence of the quantum efficiency under back illumination, a diffusion length of 115 mu m was obtained.
Keywords :
carrier lifetime; elemental semiconductors; inversion layers; metal-insulator-semiconductor devices; silicon; solar cells; 13.5 percent; 140 micron; 7.8 percent; MIS; Si-Si3N4; back illumination; bifacial inversion layer solar cells; coarse-gridded ohmic contact; diffusion length; fabrication; front illumination; multicrystalline Si substrates; optical coating film; passivating film; quantum efficiency; rear-side configuration; thickness dependence; Lighting; Ohmic contacts; Optical device fabrication; Optical films; Optical sensors; Photovoltaic cells; Plasmas; Semiconductor films; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105972
Filename :
105972
Link To Document :
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