Title :
DLTS analysis of WSe2 solar cells
Author :
Schweikardt, H.P. ; Lux-Steiner, M. Ch ; Vögt, M. ; Bucher, E.
Author_Institution :
Dept. of Phys., Konstanz Univ., West Germany
Abstract :
In/p-WSe2 and n-ZnO/p-WSe2 junctions are investigated by DLTS. In both kinds of diode a dominant trap concentration is observed at 460 meV for unintentionally doped WSe2 crystals. Lower trap concentrations are found to be at 200 meV and 300 meV. The devices exhibit temperature-dependent capacities and capture rates. SIMS and laser mass spectrometry analyses reveal that these crystals are mainly contaminated by Mo, Cr, V, Fe, and Cu. DLTS measurements on WSe2 crystals that were doped by these elements during the single-crystal growth of ion etching, indicate that the trap at 460 meV may not be due to the detected impurities Mo and Cu.
Keywords :
deep level transient spectroscopy; electron traps; impurities; secondary ion mass spectra; solar cells; tungsten compounds; 200 meV; 300 meV; 460 meV; DLTS analysis; In-WSe2; SIMS; WSe2 solar cells; WSe2:Cr; WSe2:Cu; WSe2:Fe; WSe2:Mo; WSe2:V; ZnO-WSe2; capture rates; detected impurities; diode; dominant trap concentration; ion etching; laser mass spectrometry analyses; single-crystal growth; temperature-dependent capacities; Chromium; Crystals; Diodes; Doping; Etching; Filling; Frequency; Impurities; Iron; Mass spectroscopy; Photovoltaic cells; Pollution measurement; Temperature dependence; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105979
