Title :
The diode current mechanism in CuInSe2/(CdZn)S heterojunctions
Author :
Roy, M. ; Damaskinos, S. ; Phillips, J.E.
Author_Institution :
Inst. of Energy Conversion, Deleware Univ., Newark, DE, USA
Abstract :
The forward diode current in optimized CuInSe2/(CdZn)S devices with increasing Zn concentration (up to 26%) is reported. Measurements included spectral response and current-voltage as a function of temperature. An activation energy equal to the bandgap of the CuInSe2 and independent of the Zn concentration of the (CdZn)S was found. Analysis of the illuminated devices consistently revealed a diode ideality factor of 2. The results are consistent with a diode current dominated by SRH recombination in the CuInSe2. Low-temperature (T<273 K) J-V behavior is due to the presence of a back diode in series with the main heterojunction solar cell.
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; electron-hole recombination; p-n heterojunctions; solar cells; ternary semiconductors; zinc compounds; CuInSe2-(CdZn)S; SRH recombination; activation energy; diode current; heterojunction solar cell; ideality factor; low temperature; semiconductor; spectral response; Conductive films; Current measurement; Diodes; Heterojunctions; Lighting; Photonic band gap; Photovoltaic cells; Temperature; Thin film devices; Zinc;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105986
