Pulsed THz emission from low temperature grown Be-doped InGaAs/InAlAs photoconductive switches at 1030 nm excitation

Author

Dietz, R.J.B. ; Wilk, R. ; Globisch, B. ; Roehle, H. ; Stanze, D. ; Ullrich, S. ; Schumann, S. ; Born, N. ; Voss, N. ; Stecher, M. ; Koch, M. ; Sartorius, B. ; Schell, M.

Author_Institution

Fraunhofer Inst. for Telecommun., Heinrich-Hertz-Inst., Berlin, Germany

fYear

2012

fDate

23-28 Sept. 2012

Firstpage

1

Lastpage

3

Abstract

We present first results of pulsed THz emission from low temperature (LT) MBE grown Be-doped InGaAs/InAlAs multi-nanolayer structures at an excitation wavelength of 1030 nm. The spectra obtained reach 3 THz. We further investigate the material´s relaxation time constants by differential transmission experiments.

Keywords

III-V semiconductors; aluminium compounds; beryllium; gallium arsenide; indium compounds; microwave photonics; molecular beam epitaxial growth; nanophotonics; nanostructured materials; optical multilayers; optical switches; photoconducting switches; terahertz wave generation; terahertz wave spectra; InGaAs-InAlAs:Be; differential transmission experiments; low temperature MBE grown multinanolayer structures; low temperature grown photoconductive switches; material relaxation time constants; pulsed THz emission; wavelength 1030 nm; Electron traps; Indium gallium arsenide; Laser excitation; Optical fiber dispersion; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on

Conference_Location

Wollongong, NSW

ISSN

2162-2027

Print_ISBN

978-1-4673-1598-2

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/IRMMW-THz.2012.6380349

Filename

6380349