Dependence of Transistor Laser optical frequency response on quantum-well position

Author

Kaatuzian, Hassan ; Taghavi, Iman ; Danayee, Mohammad

Author_Institution

Electr. Eng. Dept., Amirkabir Univ. of Technol., Tehran

fYear

2008

fDate

21-24 Nov. 2008

Firstpage

406

Lastpage

409

Abstract

In this paper we will report analysis of a quantum-well (160 Aring QW) Transistor Laser with 150 mum cavity length using a charge control model in order for modifying QW location through base region. The analysis shows significant enhancement, at constant bias currents, in optical bandwidth due to moving the QW in the direction of collector-base junction. No remarkable resonance peak, limiting factor in laser diodes, is observed throughout this modification in TL structure. The method simulated here could be utilized for TL structure design.

Keywords

III-V semiconductors; frequency response; gallium arsenide; heterojunction bipolar transistors; indium compounds; laser cavity resonators; optical design techniques; quantum well lasers; GaAs-InGaAs-GaAs; HBT transistor laser structure; QW transistor laser; TL structure design; TL structure modification; cavity length; charge control model; collector-base junction; laser diodes; modified QW location; optical bandwidth; quantum-well position; resonance peak; size 150 mum; transistor laser optical frequency response; Equations; Frequency response; Gallium arsenide; Heterojunction bipolar transistors; Laser modes; Masers; Microwave transistors; Quantum well lasers; Radiative recombination; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on

Conference_Location

Jaipur

Print_ISBN

978-1-4244-2690-4

Electronic_ISBN

978-1-4244-2691-1

Type

conf

DOI

10.1109/AMTA.2008.4763127

Filename

4763127