Title :
CuInSe2 films prepared by screen-printing and sintering method
Author :
Arita, T. ; Suyama, N. ; Kita, Y. ; Kitamura, S. ; Hibino, T. ; Takada, H. ; Omura, K. ; Ueno, N. ; Murozono, M.
Author_Institution :
Matsushita Battery Ind. Co. Ltd., Osaka, Japan
Abstract :
The production of polycrystalline CuInSe2 films by the screen-printing and sintering method is presented. To prepare fine powder for the screen-printing CuInSe2 paste, pure Cu, In, and Se powders were mixed and ground in an agate ball mill with distilled water or ethylene glycol monophenyl ether to a grain size of around 1.5 mu m. It was found that CuInSe2 is formed during the grinding process at room temperature, and its quantity increases proportionally to grinding time. The CuInSe2 film is p-type with a resistivity of 1.1 Omega cm, Hall mobility of 1.0 cm2/Vs, and carrier concentration of 6.4*1018 cm-3, and the optical bandgap is 1.0 eV. Photovoltaic effect was observed in a CdS/CuInSe2 heterojunction fabricated by depositing CdS film on the sintered CuInSe2 by RF sputtering.
Keywords :
Hall effect; II-VI semiconductors; cadmium compounds; carrier density; carrier mobility; copper compounds; electronic conduction in crystalline semiconductor thin films; energy gap; p-n heterojunctions; photovoltaic effects; semiconductor growth; sintering; ternary semiconductors; thick films; CdS film; CdS-CuInSe2 heterojunction; Hall mobility; RF sputtering; carrier concentration; grain size; grinding; optical bandgap; photovoltaic effect; polycrystalline CuInSe2 films; powder; resistivity; screen-printing; semiconductor; sintering; Anti-freeze; Ball milling; Conductivity; Grain size; Hall effect; Land surface temperature; Optical films; Photonic band gap; Powders; Production;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105992
