DocumentCode
2512416
Title
Development of D-band Gunn oscillator
Author
Kumar, Meena R. ; Kumar, Dilip ; Shukla, AK
Author_Institution
Defence Electron. Applic. Lab., Dehradun
fYear
2008
fDate
21-24 Nov. 2008
Firstpage
316
Lastpage
318
Abstract
Gunn oscillator has been developed at center frequency of 140 GHz with the output power of 7 dBm using InP Gunn device. Resonant cap design approach was chosen due to its superiority in tunability and low FM noise. The Gunn Oscillator has been temperature cycled form 0degC to +50degC and a frequency stability of 200 KHz/degC was observed. The main use of this oscillator is as local oscillator especially in development of Radiometer for Imaging application.
Keywords
Gunn oscillators; III-V semiconductors; frequency stability; indium compounds; millimetre wave oscillators; radiometry; D-band Gunn oscillator; FM noise; Gunn device; InP; frequency 140 GHz; frequency stability; imaging application; radiometer; resonant cap design approach; temperature 0 C to 50 C; Circuits; Diodes; Frequency; Gunn devices; Impedance; Indium phosphide; Low pass filters; Oscillators; Power generation; Resonance;
fLanguage
English
Publisher
ieee
Conference_Titel
Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on
Conference_Location
Jaipur
Print_ISBN
978-1-4244-2690-4
Electronic_ISBN
978-1-4244-2691-1
Type
conf
DOI
10.1109/AMTA.2008.4763130
Filename
4763130
Link To Document