The production of low resistivity p-type CdTe thin films using the coevaporation of CdTe with Te

Author

Hill, R. ; Owens, T. ; Arshed, S. ; Miles, R.W.

Author_Institution

Dept. of Phys., Newcastle upon Tyne Polytech., UK

fYear

1988

fDate

1988

Firstpage

1662

Abstract

The production of low-resistivity, p-type CdTe thin films using the coevaporation of CdTe with Te is presented. Thin films of CdTe were deposited onto glass slides using the coevaporation of CdTe with Te with control of the source temperature. p-type thin films were produced, and the influence of the Te source temperature on the electrical and optical properties of these films was investigated. The resistivity could be reduced from 10⁶ Omega cm for T_Te=20 degrees C to <0.1 Omega cm for T_Te>400 degrees C. The mobility of the films is shown to increase with an increase in T_Te to values >100 cm² V^-1 s^-1 for CdTe resistivities <50 Omega cm. Arrhenius plots of rho and mu are also reported, and the results are consistent with a decrease in the intergrain potential barrier height as the CdTe resistivity is reduced.

Keywords

II-VI semiconductors; cadmium compounds; carrier mobility; electronic conduction in crystalline semiconductor thin films; semiconductor growth; semiconductor thin films; vacuum deposition; Arrhenius plots; CdTe; coevaporation; electrical properties; intergrain potential barrier height; mobility; optical properties; p-type CdTe thin films; resistivity; semiconductor; Conductivity; Contact resistance; Glass; Optical control; Optical films; Photonic band gap; Photovoltaic cells; Production; Sputtering; Substrates; Tellurium; Temperature; Temperature control; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE

Conference_Location

Las Vegas, NV, USA

Type

conf

DOI

10.1109/PVSC.1988.105994

Filename

105994