DocumentCode
2512448
Title
Photoelectrochemical characterization of CuGaSe2 and Cu(Ga,In)Se2 films and defect chemical implications for solar cell performance
Author
Cahen, David ; Kisilev, Anna ; Marcu, Victor ; Schock, Hans W. ; Noufi, Rommel
Author_Institution
Dept. of Struct. Chem., Weizmann Inst. of Sci., Rehovot, Israel
fYear
1988
fDate
1988
Firstpage
1437
Abstract
The effective electronic parameters and the optical bandgap of CuGaSe2 and Cu(Ga,In)Se2 films were determined by using an organic liquid electrolyte to form a Schottky barrier to the films. Trends in the electronic parameters, composition, and additional information were used in a defect chemical framework to explore the effects of Ga substitution/doping on CuInSe2. Values for optical and (effective) electronic parameters for several CuGaSe2 films are reported. Photocurrent-wavelength data are also shown. In CuGaSe2 (as in CuInSe2), film stoichiometry needs to be reasonably well controlled, close to Cu/Ga=1, according to the results.
Keywords
Schottky effect; copper compounds; crystal defects; electrochemistry; energy gap; gallium compounds; indium compounds; optical constants; photochemistry; photoconductivity; semiconductor thin films; semiconductor-electrolyte boundaries; solar cells; ternary semiconductors; CuGa1-xInxSe2; CuGaSe2; Ga substitution; Schottky barrier; defect; doping; electronic parameters; film stoichiometry; optical bandgap; organic liquid electrolyte; photocurrent-wavelength data; photoelectrochemical characterisation; semiconductor thin films; solar cell performance; Chemicals; Degradation; Doping; Electrodes; Guidelines; Optical films; Photonic band gap; Photovoltaic cells; Schottky barriers; Transistors; Voltage; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105996
Filename
105996
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