Title :
Evaluation and characterization of (ZnSiAs2)1-x(2GaAs)x and (CuInSe2)1-x(2InAs)x for photovoltaic device applications
Author :
Hasoon, F.S. ; Al-Douri, A.A.J. ; Al-Foadi, A.H.A. ; Alias, M.F.A. ; Swartzlander, A.B. ; Abou-Elfotouh, F.A. ; Nelson, A.J. ; Fisher, R.F. ; Dhere, R.G. ; Asher, S.E. ; Kazmerski, L.L.
Author_Institution :
Solar Energy Res. Center, Baghdad, Iraq
Abstract :
A determination of the properties of two alloy semiconductors, (ZnSiAsd2)1-x(2GaAs)x and (CuInSe2)1-x(2InAs)x, is presented for use in potential photovoltaic device applications. The methods of preparation and processing of single-crystals are reported. Compositional, structural, chemical, and electrooptical parameters are documented. Some emphasis is placed on the properties of the x=0.5 materials, which have bandgaps of 1.88 and 0.80 eV for (ZnSiAs2)0.5(2GaAs)0.5 and (CuInSe2)0.5(2InAs)0.5, respectively. Preliminary data on CdS/(ZnSiAs2)0.5(2GaAs)0.5 cell structures are presented to demonstrate the device feasibility of this semiconductor.
Keywords :
III-V semiconductors; copper compounds; crystal atomic structure of inorganic compounds; crystal growth from melt; electro-optical effects; energy gap; gallium arsenide; indium compounds; photovoltaic cells; ternary semiconductors; zinc compounds; (CuInSe2)1-x(InAs)x; 0.80 eV; 1.88 eV; CdS-(ZnSiAs2)0.5(GaAs)0.5; bandgaps; characterization; chemical parameters; compositional parameters; device feasibility; electrooptical parameters; photovoltaic device applications; preparation; properties; semiconductor; single-crystals; structural parameters; Chemical compounds; Chemical elements; Chemicals; Composite materials; Crystals; Electrons; Laboratories; Mercury (metals); Photonic band gap; Photovoltaic systems; Probes; Semiconductor materials; Solar power generation; X-ray diffraction;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105997
